• DocumentCode
    1991815
  • Title

    Millimeter Wave GaAs IMPATT Diodes

  • Author

    Massé, D. ; Adlerstein, M.G. ; Holway, L.H., Jr.

  • fYear
    1985
  • fDate
    9-13 Sept. 1985
  • Firstpage
    165
  • Lastpage
    169
  • Abstract
    Amplifiers and oscillators, using gallium arsenide (GaAs) double-drift IMPATT diodes have become one of the leading solid-state contenders to replace electron tubes as power sources in millimeter wave systems. In this paper, we describe the state-of-the-art performance obtained in our laboratory through device and circuit modeling. Some results obtained at frequencies ranging from 20 to 94 GHz are shown.
  • Keywords
    Diodes; Electron tubes; Frequency; Gallium arsenide; Laboratories; Millimeter wave circuits; Oscillators; Power amplifiers; Power system modeling; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1985. 15th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1985.333474
  • Filename
    4132162
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1991815