Title :
High Power, High Efficiency LP. MOCVD InP Gunn Diodes for 94GHz
Author :
di Forte-Poisson, M.A. ; Colomer, G. ; Brylinski, C. ; Duchemin, J.P. ; Azan, F. ; Lacombe, J.
Author_Institution :
Thomson-CSF. Domaine de Corbeville 91401 ORSAY
Abstract :
High power and high efficiency InP Gunn diodes which were made from layers grown by LP-MOCVD have been developed in the millimeter-wave range. The Gunn diodes, processed using the integral heat sink technique have delivered up to 100 mw cw output power with 2,5% efficiency at 94GHz, while average power levels in excess of 90 mw were obtained at 94GHz. The Gunn diodes operated at a bulk temperature less than 200°C under maximum output power operating condition. The AM noise of the 94GHz Gunn oscillator was ¿140 dbc/Hz SSB at 10KHz from the carrier.
Keywords :
Amplitude modulation; Diodes; Gunn devices; Heat sinks; Indium phosphide; MOCVD; Millimeter wave technology; Oscillators; Power generation; Temperature;
Conference_Titel :
Microwave Conference, 1985. 15th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1985.333476
