Title :
Multilayered shear wave resonator consisting of c-axis tilted ZnO films
Author :
Morisato, Naoki ; Takayanagi, Shinji ; Yanagitani, Takahiko ; Matsukawa, Mami ; Watanabe, Yoshiaki
Author_Institution :
Fac. of Eng., Doshisha Univ., Kyotanabe, Japan
Abstract :
Multilayer resonator consisting of six layered ZnO films was fabricated using RF magnetron sputtering. To prevent degradation of crystalline orientation, SiO2 buffer layers were inserted between each ZnO layer. The influences of the method for SiO2 deposition on the crystalline orientation also have been investigated. Crystalline orientation of the c-axis tilted ZnO films were confirmed by XRD pole figure analysis and SEM images. In the sixth order mode shear mode resonant frequency, high efficient shear mode excitation with relatively suppressed extensional mode excitation was observed. More extensional mode suppression is expected by increasing the number of the layer.
Keywords :
II-VI semiconductors; X-ray diffraction; acoustic resonators; crystal orientation; crystal resonators; elastic waves; multilayers; piezoelectricity; scanning electron microscopy; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; RF magnetron sputtering; SEM images; XRD pole figure analysis; ZnO; c-axis tilted zinc oxide films; crystalline orientation; degradation; multilayered shear wave resonator; relatively suppressed extensional mode excitation; shear mode excitation; silica buffer layers; sixth order mode shear mode resonant frequency; Buffer layers; Crystallization; Degradation; Image analysis; Magnetic multilayers; Radio frequency; Resonant frequency; Sputtering; X-ray scattering; Zinc oxide; Multilayered resonator; RF magnetron sputtering method; Thickness shear mode; c-axis-tilted ZnO films; electromechanical coupling coefficient;
Conference_Titel :
Ultrasonics Symposium (IUS), 2009 IEEE International
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4389-5
Electronic_ISBN :
1948-5719
DOI :
10.1109/ULTSYM.2009.5441444