Title :
Design of 65 nm CMOS SRAM for space applications: A comparative study
Author :
Gorbunov, Maxim S. ; Dolotov, Pavel S. ; Antonov, A.A. ; Zebrev, Gennady I. ; Emeliyanov, Vladimir V. ; Boruzdina, Anna B. ; Petrov, Andrey G. ; Ulanova, Anastasia V.
Author_Institution :
Sci. Res. Inst. of Syst. Anal., Moscow, Russia
Abstract :
We study the design of different SRAM blocks based on a commercial 65 nm CMOS technology and discuss the experimental results for X-ray, proton and heavy ion irradiation campaigns. The results obtained show that the number of affected bits depends not only on LET value, but also on the localization of a strike. DICE cells demonstrate about 2-3 orders of magnitude lower than cross-sections for 6T-cells due to the 2-μm nodal spacing of sensitive pairs. Solid and intermittent guard rings has high effectiveness in SEL elimination.
Keywords :
CMOS memory circuits; SRAM chips; X-ray effects; integrated circuit design; proton effects; radiation hardening (electronics); CMOS SRAM; SEB; SEL elimination; SEU; X-ray irradiation; guard rings; heavy ion irradiation; proton irradiation; single event upset; size 2 mum; size 65 nm; Layout; Power supplies; Protons; Radiation effects; Random access memory; Standards; Transistors; CMOS; DICE; MCU; RHBD; SBU; SEU; SRAM; TID; critical charge; guard rings; heavy ions; protons;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937379
