DocumentCode
1992081
Title
Accurate Simulation of MESFET by Finite Element Method Including Energy Transport and Substrate Effects
Author
Song, N.U. ; Itoh, T.
fYear
1985
fDate
9-13 Sept. 1985
Firstpage
245
Lastpage
250
Abstract
A 2-dimensional FEM Code is developed to characterize the GaAs MESFET device with sub-micron gate length. Bilinear rectangular elements are adopted to simplify the input and output data manipulation. The energy transport effect and the substrate effect are also included.
Keywords
Boundary conditions; Buffer layers; Doping; Electrons; FETs; Finite difference methods; Finite element methods; Gallium arsenide; MESFETs; Poisson equations;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1985. 15th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.1985.333487
Filename
4132175
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