Title :
Accurate Simulation of MESFET by Finite Element Method Including Energy Transport and Substrate Effects
Author :
Song, N.U. ; Itoh, T.
Abstract :
A 2-dimensional FEM Code is developed to characterize the GaAs MESFET device with sub-micron gate length. Bilinear rectangular elements are adopted to simplify the input and output data manipulation. The energy transport effect and the substrate effect are also included.
Keywords :
Boundary conditions; Buffer layers; Doping; Electrons; FETs; Finite difference methods; Finite element methods; Gallium arsenide; MESFETs; Poisson equations;
Conference_Titel :
Microwave Conference, 1985. 15th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1985.333487
