DocumentCode
1992091
Title
A Fully Implanted 1 W, 18 GHz FET
Author
Huguet, Pierre ; Baudet, Pierre ; Maluenda, J. ; Bellaiche, Joseph ; Pertus, Marcel
fYear
1985
fDate
9-13 Sept. 1985
Firstpage
251
Lastpage
255
Abstract
The reliability of power FET´s is strongly affected by the local uniformity of the active layer. Therefore an implanted layer has been optimized for 2.4 mm power devices. The main features of the devices are a 0.7 um gate length, a 50 um unit gate width and a via-hole source grounding. An output power of 1 W at 18 GHz with 6 dB linear gain has been measured. This result is the best ever reported for implanted power devices, and demonstrates the potentiality of ion implantation for power FET´s production.
Keywords
Design optimization; Gain measurement; Grounding; Inductance; Ion implantation; Microwave FETs; Microwave transistors; Power generation; Power measurement; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1985. 15th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.1985.333488
Filename
4132176
Link To Document