Title :
Characteristics of HEMT- Structures
Author_Institution :
Department of Electronics, Moscow Engineering Physics Institute, Kashirskoe shsse 31, 115409, USSR
Abstract :
A calculation of the potential, field and electron concentration distributions in the structure of high-mobility field-effect transistor (HEMT) as a functions of gate voltage at room temperature has been performed. The results show that degenerate statistics are very important for modeling of HEMT-structures. It is shown, that the charge density in the channel increases linearly with gate voltage.
Keywords :
Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Heterojunctions; Integral equations; Statistical distributions; Temperature distribution; Voltage;
Conference_Titel :
Microwave Conference, 1985. 15th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1985.333489
