• DocumentCode
    1992107
  • Title

    Characteristics of HEMT- Structures

  • Author

    Tolstoi, A.I.

  • Author_Institution
    Department of Electronics, Moscow Engineering Physics Institute, Kashirskoe shsse 31, 115409, USSR
  • fYear
    1985
  • fDate
    9-13 Sept. 1985
  • Firstpage
    256
  • Lastpage
    259
  • Abstract
    A calculation of the potential, field and electron concentration distributions in the structure of high-mobility field-effect transistor (HEMT) as a functions of gate voltage at room temperature has been performed. The results show that degenerate statistics are very important for modeling of HEMT-structures. It is shown, that the charge density in the channel increases linearly with gate voltage.
  • Keywords
    Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Heterojunctions; Integral equations; Statistical distributions; Temperature distribution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1985. 15th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1985.333489
  • Filename
    4132177
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1992107