• DocumentCode
    1992126
  • Title

    Extremely Low Noise and Low Temperature TEGFET Operation

  • Author

    Delagebeaudeuf, D. ; Delesculuse, P. ; Jay, P.R.

  • Author_Institution
    Thomson-CSF Microwave Components Division, Corbeville BP 10, Orsay 91401 France.
  • fYear
    1985
  • fDate
    9-13 Sept. 1985
  • Firstpage
    260
  • Lastpage
    263
  • Abstract
    This paper presents a temperature dependent version of the expression used to describe the noise behaviour of a MESFET. By applying this to the TEGFET case it is possible to demonstrate the relative contributions of the different parameters to the low noise behaviour at temperatures below room temperature.
  • Keywords
    Costs; Equations; FETs; Gallium arsenide; HEMTs; Low-noise amplifiers; MESFETs; MODFETs; Operational amplifiers; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1985. 15th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1985.333490
  • Filename
    4132178
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1992126