DocumentCode :
1992419
Title :
Mode-locked Yb-doped fiber laser with epitaxial graphene grown on 6H-SiC substrates
Author :
Liu, Jiang ; Wei, Rusheng ; Wang, Ke ; Xu, Xiangang ; Wang, Pu
Author_Institution :
Inst. of Laser Eng., Beijing Univ. of Technol., Beijing, China
fYear :
2011
fDate :
Aug. 28 2011-Sept. 1 2011
Firstpage :
50
Lastpage :
51
Abstract :
Graphene epitaxially grown on 6H-SiC substrates by thermal decomposition was used as saturable absorbers for mode-locking of ytterbium-doped fiber lasers. Stable picosecond 19 nJ pulse centered at 1035 nm was generated at 1.05 MHz repetition rate.
Keywords :
epitaxial growth; fibre lasers; graphene; laser mode locking; optical saturable absorption; silicon compounds; wide band gap semiconductors; ytterbium; energy 19 nJ; epitaxial growth; frequency 1.05 MHz; graphene; mode-locked fiber laser; saturable absorbers; thermal decomposition; wavelength 1035 nm; Fiber lasers; Laser mode locking; Optical fiber couplers; Optical fiber devices; Optical fiber polarization; Pump lasers; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4577-1939-4
Type :
conf
DOI :
10.1109/IQEC-CLEO.2011.6194052
Filename :
6194052
Link To Document :
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