Title :
New SEE and TID test results for 2-Gbit and 4-Gbit DDR3 SDRAM devices
Author :
Herrmann, Markus ; Grurmann, Kai ; Gliem, F. ; Schmidt, Heidemarie ; Muschitiello, Michele ; Ferlet-Cavrois, Veronique
Author_Institution :
Inst. of Comput. & Network Eng., Tech. Univ. Braunschweig, Braunschweig, Germany
Abstract :
Different 2-Gbit and 4-Gbit DDR3 SDRAM devices have been tested. Under 60Co, some of them showed a peculiar error pattern. Under heavy ions, none of the tested types displayed any latch-up.
Keywords :
DRAM chips; integrated circuit testing; radiation hardening (electronics); DDR3 SDRAM devices; SEE test result; TID test result; error pattern; heavy ions; Conferences; Current measurement; Performance evaluation; Radiation effects; SDRAM; Single event upsets; Temperature measurement; DDR3; SDRAM; SEE; TID;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937399
