DocumentCode
1992566
Title
Heavy ion testing of two types of digital step attenuator
Author
Sharp, R.E. ; Hofman, Jiri ; Devexhiu, A. ; Denny, P.
Author_Institution
Synergy Health plc., Didcot, UK
fYear
2013
fDate
23-27 Sept. 2013
Firstpage
1
Lastpage
4
Abstract
This presentation details the results of heavy ion radiation testing of two types of digital step attenuator fabricated in Peregrine Semiconductor´s UltraCMOS® process. No single event effects were observed, even at the highest LET particle available at the RADEF facility. These results demonstrate the very high robustness of this process to SEE.
Keywords
CMOS digital integrated circuits; attenuators; integrated circuit testing; radiation hardening (electronics); LET particle; Peregrine Semiconductor UltraCMOS process; RADEF facility; SEE; digital step attenuator; heavy ion radiation testing; single event effects; Attenuation; Attenuation measurement; Attenuators; Ions; Testing; Transient analysis; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location
Oxford
Type
conf
DOI
10.1109/RADECS.2013.6937400
Filename
6937400
Link To Document