Title :
Heavy ion testing of two types of digital step attenuator
Author :
Sharp, R.E. ; Hofman, Jiri ; Devexhiu, A. ; Denny, P.
Author_Institution :
Synergy Health plc., Didcot, UK
Abstract :
This presentation details the results of heavy ion radiation testing of two types of digital step attenuator fabricated in Peregrine Semiconductor´s UltraCMOS® process. No single event effects were observed, even at the highest LET particle available at the RADEF facility. These results demonstrate the very high robustness of this process to SEE.
Keywords :
CMOS digital integrated circuits; attenuators; integrated circuit testing; radiation hardening (electronics); LET particle; Peregrine Semiconductor UltraCMOS process; RADEF facility; SEE; digital step attenuator; heavy ion radiation testing; single event effects; Attenuation; Attenuation measurement; Attenuators; Ions; Testing; Transient analysis; Voltage measurement;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937400
