Title :
Analysis of short-term NBTI effect on the Single-Event Upset sensitivity of a 65nm SRAM using two-photon absorption
Author :
El Moukhtari, I. ; Pouget, V. ; Darracq, F. ; Larue, C. ; Lewis, David ; Perdu, P.
Author_Institution :
IMS, Univ. Bordeaux 1, Talence, France
Abstract :
We used two-photon absorption laser testing to characterize the effect of short-term NBTI aging on the SEU sensitivity of 65 nm CMOS SRAM cell. Results indicate a fast increase of SEU sensitivity due to aging.
Keywords :
CMOS memory circuits; SRAM chips; circuit testing; negative bias temperature instability; radiation hardening (electronics); two-photon processes; CMOS SRAM cell; SEU sensitivity; short-term NBTI aging; single-event upset sensitivity; size 65 nm; two-photon absorption laser testing; Measurement by laser beam; Random access memory; Sensitivity; Single event upsets; Stress; Threshold voltage; Voltage measurement; Negative Bias Temperature Instability (NBTI); Pulsed laser testing; Single Event Upset (SEU); Two Photon Absorption (TPA);
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937408
