DocumentCode
1992728
Title
Analysis of short-term NBTI effect on the Single-Event Upset sensitivity of a 65nm SRAM using two-photon absorption
Author
El Moukhtari, I. ; Pouget, V. ; Darracq, F. ; Larue, C. ; Lewis, David ; Perdu, P.
Author_Institution
IMS, Univ. Bordeaux 1, Talence, France
fYear
2013
fDate
23-27 Sept. 2013
Firstpage
1
Lastpage
6
Abstract
We used two-photon absorption laser testing to characterize the effect of short-term NBTI aging on the SEU sensitivity of 65 nm CMOS SRAM cell. Results indicate a fast increase of SEU sensitivity due to aging.
Keywords
CMOS memory circuits; SRAM chips; circuit testing; negative bias temperature instability; radiation hardening (electronics); two-photon processes; CMOS SRAM cell; SEU sensitivity; short-term NBTI aging; single-event upset sensitivity; size 65 nm; two-photon absorption laser testing; Measurement by laser beam; Random access memory; Sensitivity; Single event upsets; Stress; Threshold voltage; Voltage measurement; Negative Bias Temperature Instability (NBTI); Pulsed laser testing; Single Event Upset (SEU); Two Photon Absorption (TPA);
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location
Oxford
Type
conf
DOI
10.1109/RADECS.2013.6937408
Filename
6937408
Link To Document