Title :
Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation
Author :
Gaillardin, M. ; Raine, M. ; Duhamel, O. ; Girard, S. ; Paillet, P. ; McMorrow, Dale ; Warner, Jeffrey H. ; Andrieu, F. ; Barraud, S. ; Faynot, O.
Author_Institution :
DAM, CEA, Arpajon, France
Abstract :
We investigate the impact of performance boosters using mechanical stress on the Single-Event Transient (SET) response of nanometer scaled Fully-Depleted Silicon-On-Insulator (SOI) devices. Heavy ion-induced charge collection mechanisms are analyzed through the measurement of fast transients on dedicated test structures processed either on standard relaxed or bi-axially tensile strained SOI substrates.
Keywords :
internal stresses; nanoelectronics; radiation hardening (electronics); semiconductor device testing; transient response; SET response; Si; heavy ion-induced charge collection mechanisms; mechanical strain; mechanical stress; nanometer scaled SOI devices; nanometer scaled fully-depleted silicon-on-insulator devices; pulsed laser irradiation; single-event transient response; tensile strained SOI substrates; Lasers; Logic gates; Performance evaluation; Silicon; Strain; Transient analysis; Transistors; Fully Depleted (FD); SOI; Single-Event Effects (SEE); Single-Event Transient (SET); charge collection; heavy ion; mechanical stress; pulsed laser; strained silicon;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937409
