Title :
The Optimisation of Third-Order Intermodulation and Output Powr of an X-Band MESFET Amplifier Based on Small-Signal Measurements
Author :
Lambrianou, G.M. ; Aitchison, C.S.
Author_Institution :
Cyprus Telecommunication Authority, BOX 4929, Nicosia 142, CYPRUS; Dept. of Electronics, Chelsea College, Pulton Place, London SW6 5PR, UK
Abstract :
A new technique for the design of a microwave GaAs MESFET amplifier under large-signal conditions with the best compromise between output power and third-order intermodulation (IM3) distortion is described. It is based on the device nonlinear model which is used with the Volterra series to predict the large signal behaviour. Experimental verification is given for two MESFET X-band amplifiers with various load. conditions and the results compared with the theory.
Keywords :
Distortion measurement; Gallium arsenide; Intermodulation distortion; MESFETs; Microwave amplifiers; Microwave devices; Microwave theory and techniques; Nonlinear distortion; Power amplifiers; Power generation;
Conference_Titel :
Microwave Conference, 1985. 15th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1985.333536
