DocumentCode
1993102
Title
The Optimisation of Third-Order Intermodulation and Output Powr of an X-Band MESFET Amplifier Based on Small-Signal Measurements
Author
Lambrianou, G.M. ; Aitchison, C.S.
Author_Institution
Cyprus Telecommunication Authority, BOX 4929, Nicosia 142, CYPRUS; Dept. of Electronics, Chelsea College, Pulton Place, London SW6 5PR, UK
fYear
1985
fDate
9-13 Sept. 1985
Firstpage
552
Lastpage
557
Abstract
A new technique for the design of a microwave GaAs MESFET amplifier under large-signal conditions with the best compromise between output power and third-order intermodulation (IM3) distortion is described. It is based on the device nonlinear model which is used with the Volterra series to predict the large signal behaviour. Experimental verification is given for two MESFET X-band amplifiers with various load. conditions and the results compared with the theory.
Keywords
Distortion measurement; Gallium arsenide; Intermodulation distortion; MESFETs; Microwave amplifiers; Microwave devices; Microwave theory and techniques; Nonlinear distortion; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1985. 15th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.1985.333536
Filename
4132224
Link To Document