Title :
Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBT
Author :
Foro, L.L. ; Touboul, A.D. ; Wrobel, F. ; Rech, P. ; Dilillo, L. ; Frost, Christopher ; Saigne, F.
Author_Institution :
Univ. Montpellier II, Montpellier, France
Abstract :
Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can be occurring simultaneously. It is shown that biased negatively the gate leads to a substantial increase of SEB cross section.
Keywords :
failure analysis; insulated gate bipolar transistors; radiation hardening (electronics); SEB cross section; cosmic rays; gate rupture; gate voltage contribution; neutron-induced SEB; single event burnout; trench gate fieldstop IGBT; Electric fields; Insulated gate bipolar transistors; Logic gates; MOSFET; Neutrons; Semiconductor optical amplifiers; Sensitivity; Insulated Gate Bipolar Transistor (IGBT); SEB; SEGR; Trench Gate Fieldstop; atmospheric neutrons; cross section; gate damage;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937428
