Title :
Multiple-Cell-Upsets on a commercial 90nm SRAM in dynamic mode
Author :
Tsiligiannis, G. ; Dilillo, L. ; Bosio, A. ; Girard, P. ; Pravossoudovitch, S. ; Todri, A. ; Virazel, A. ; Frost, Christopher ; Wrobel, F. ; Saigne, F.
Author_Institution :
Lab. d´Inf., de Robot. et de Microelectron. de Montpellier (LIRMM), Univ. de Montpellier II, Montpellier, France
Abstract :
Downscaling of devices increases the Multiple-Cell-Upset (MCU) cross section of SRAMs making them an important threat for the robustness of systems. In this paper, we present different types of MCUs as they were recorded during atmospheric-like neutron irradiation experiments, during which a commercial 90nm SRAM was tested in dynamic mode. This study shows that when the memory is in dynamic mode, not only the typical MCU that involve a few flipped cells may appear but also, large clusters of upsets are possible to occur with hundreds of cells being affected. We identify different patterns of MCUs and categorize them according to their shapes and sizes.
Keywords :
SRAM chips; neutron effects; radiation hardening (electronics); MCU cross section; atmospheric-like neutron irradiation experiments; commercial SRAM; dynamic mode; flipped cells; multiple-cell-upsets; size 90 nm; Heuristic algorithms; Neutrons; Radiation effects; Random access memory; Shape; Stress; Testing; Multiple Cell Upsets (MCU); SRAM; dynamic mode; neutron irradiation;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937429
