DocumentCode :
1993225
Title :
Sinusoidal current operation of delay time compensation for parallel connected IGBTs
Author :
Alvarez, Rodrigo ; Bernet, Steffen
Author_Institution :
Power Electron. Lab., Tech. Univ. Dresden, Dresden, Germany
fYear :
2012
fDate :
15-20 Sept. 2012
Firstpage :
3942
Lastpage :
3949
Abstract :
The parallel connection of IGBTs is being applied in various low and medium voltage converters. The selection of the devices, the manual parameterization of gate units and the substantial device de-rating are substantial disadvantages of state of the art converters with parallel connected IGBTs. A new, low expensive and automated delay time compensation method without additional current measurements was introduced in [1]. This paper briefly reviews the structure and function of this new scheme, shows the extension of the scheme for three parallel connected IGBTs and investigates the performance of the new delay time compensation principle for sinusoidal current operation at different cosφ and ma values as in a converter for drives.
Keywords :
compensation; delays; insulated gate bipolar transistors; power convertors; power semiconductor devices; automated delay time compensation; device de-rating; gate unit parameterization; low voltage converters; medium voltage converters; parallel connected IGBT; sinusoidal current operation; Bridge circuits; Current measurement; Delay; Insulated gate bipolar transistors; Integrated circuits; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4673-0802-1
Electronic_ISBN :
978-1-4673-0801-4
Type :
conf
DOI :
10.1109/ECCE.2012.6342165
Filename :
6342165
Link To Document :
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