Title :
Low-Noise 45 GHz HEMT Mixer
Author :
Mass, Stephen A.
Author_Institution :
TRW Electronic Systems Group, Redondo Beach, CA 90278, USA.
Abstract :
A low-noise 45 GHz mixer with a 3 GHz IF frequency has been developed using a GaAs HEMT device. This is the first active mixer reported above 30 GHz and the first HEMT mixer. It achieves unity gain over a 2 GHz bandwidth and a minimum SSB noise figure of 7.1 dB, including the noise from an IF amplifier.
Keywords :
Bandwidth; Circuits; Gallium arsenide; HEMTs; Impedance matching; Low-frequency noise; Microstrip; Noise figure; Radio frequency; Substrates;
Conference_Titel :
Microwave Conference, 1985. 15th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1985.333544
