DocumentCode :
1993292
Title :
Braodband High-Order Frequency Multipliers by using Dual-Gate MESFET´s
Author :
Allamando, E. ; Radhy, N.E. ; Constant, E.
Author_Institution :
CENTRE HYPERFREQUENCES ET SEMICONDUCTEURS - LA CNRS n° 287 Université de Lille I - France - 59655 VILLENEUVE D´´ASCQ CEDEX
fYear :
1985
fDate :
9-13 Sept. 1985
Firstpage :
617
Lastpage :
622
Abstract :
Some experimental results obtained for high-order frequency multipliers using MESFET´s are presented. The active device considered is a GaAs Dual-Gate MESFET with submicrometer gate length. The frequency range of the output signal is from 1 up to 21 GHz, for an input frequency between .1 and 1 GHz. As a typical result, a higher multiplication factor value up to 200 has been obtained and a maximum output frequency of 40 GHz has been observed. Consequently, two main applications can be proposed: - first: as a broadband comb-generator - second: as a very simple crystal controlled high frequency generator.
Keywords :
Circuit optimization; Gallium arsenide; MESFETs; Microwave generation; Monolithic integrated circuits; Power generation; Power system harmonics; Radio frequency; Signal generators; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1985. 15th European
Conference_Location :
Paris, France
Type :
conf
DOI :
10.1109/EUMA.1985.333546
Filename :
4132234
Link To Document :
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