• DocumentCode
    1993292
  • Title

    Braodband High-Order Frequency Multipliers by using Dual-Gate MESFET´s

  • Author

    Allamando, E. ; Radhy, N.E. ; Constant, E.

  • Author_Institution
    CENTRE HYPERFREQUENCES ET SEMICONDUCTEURS - LA CNRS n° 287 Université de Lille I - France - 59655 VILLENEUVE D´´ASCQ CEDEX
  • fYear
    1985
  • fDate
    9-13 Sept. 1985
  • Firstpage
    617
  • Lastpage
    622
  • Abstract
    Some experimental results obtained for high-order frequency multipliers using MESFET´s are presented. The active device considered is a GaAs Dual-Gate MESFET with submicrometer gate length. The frequency range of the output signal is from 1 up to 21 GHz, for an input frequency between .1 and 1 GHz. As a typical result, a higher multiplication factor value up to 200 has been obtained and a maximum output frequency of 40 GHz has been observed. Consequently, two main applications can be proposed: - first: as a broadband comb-generator - second: as a very simple crystal controlled high frequency generator.
  • Keywords
    Circuit optimization; Gallium arsenide; MESFETs; Microwave generation; Monolithic integrated circuits; Power generation; Power system harmonics; Radio frequency; Signal generators; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1985. 15th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1985.333546
  • Filename
    4132234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1993292