Title :
Investigation of single-event damages on silicon carbide (SiC) power MOSFETs
Author :
Mizuta, Eiichi ; Kuboyama, Satoshi ; Abe, H. ; Iwata, Yoshiyuki ; Tamura, Takuya
Author_Institution :
Japan Aerosp. Exploration Agency, Tsukuba, Japan
Abstract :
It was demonstrated that single-event burnout (SEBs) was observed in silicon carbide power MOSFETs caused by heavy ion and proton irradiations. In addition to SEBs, permanent damage (increase of the drain leakage current) was also observed with higher LET ions similar to SiC Schottky Barrier diodes. For lower LET ions including protons, there were no leakage current increase just before SEBs were observed. The phenomenon is unique for SiC devices.
Keywords :
Schottky diodes; leakage currents; power MOSFET; proton effects; radiation hardening (electronics); silicon compounds; wide band gap semiconductors; Schottky barrier diodes; SiC; heavy ion irradiations; leakage current; power MOSFET; proton irradiations; single event burnout; single event damages; Charge measurement; Ions; Leakage currents; MOSFET; Protons; Radiation effects; Silicon carbide; Heavy ions; SiC; power MOSFETs; radiation damage; silicon carbide; single-event effects;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937436
