DocumentCode :
1993359
Title :
Threshold voltage shift in 65nm NOR flash
Author :
Lavery, Kevin
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
2013
fDate :
23-27 Sept. 2013
Firstpage :
1
Lastpage :
7
Abstract :
Neutron testing at Los Alamos Neutron Science Center (LANSCE) is presented on 65nm NOR flash; the results indicate that the neutron interaction with the flash bit occurs in single events. The initial threshold voltage (VT) of the bank plays a role in determining the likelihood of a threshold-voltage shift.
Keywords :
flash memories; radiation hardening (electronics); NOR flash; neutron radiation effects; neutron testing; single event effects; size 65 nm; threshold voltage shift; Diamonds; Histograms; Logic gates; Neutrons; Particle beams; Radiation effects; Voltage control; Flash memories; Neutron radiation effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
Type :
conf
DOI :
10.1109/RADECS.2013.6937437
Filename :
6937437
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1993359
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