Title :
Neutron and alpha SER in advanced NAND Flash memories
Author :
Bagatin, Marta ; Gerardin, Simone ; Paccagnella, Alessandro ; Ferlet-Cavrois, Veronique ; Visconti, Angelo ; Gorini, G. ; Andreani, C. ; Frost, C.D.
Author_Institution :
Dipt. di Ing. dell´Inf., Univ. di Padova, Padua, Italy
Abstract :
We study the response of NAND Flash memories to neutron and alpha particle exposure, with both Single- and Multi-Level Cell architecture devices. We analyze the error rate in the terrestrial environment and discuss scaling trends.
Keywords :
NAND circuits; flash memories; neutron effects; radiation hardening (electronics); advanced NAND flash memories; alpha SER; alpha particle exposure; error rate; multilevel cell architecture devices; neutron SER; neutron particle exposure; single-cell architecture devices; terrestrial environment; Alpha particles; Computer architecture; Flash memories; Market research; Neutrons; Nonvolatile memory; Sensitivity; Alpha Particles; Flash; Neutrons; Radiation Effects; Single Event Upset;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937440
