Title :
A physical prediction model issued from TCAD investigations for single event burnout in power MOSFETs
Author :
Siconolfi, S. ; Hubert, Guillaume ; Artola, L. ; Darracq, F. ; David, J.-P.
Author_Institution :
French Aerosp. Lab. (ONERA), Toulouse, France
Abstract :
This paper investigates SEB physical/device mechanisms in power MOSFETs, and proposes SEB prediction model. Investigations relied on 2D TCAD simulations. Calculated SEB risk for IRF360 is consistent with ground experimental values and in-flight data.
Keywords :
power MOSFET; radiation hardening (electronics); semiconductor device models; technology CAD (electronics); IRF360; TCAD; physical prediction model; power MOSFET; single event burnout; Electric fields; Epitaxial layers; MOSFET; Predictive models; Protons; Semiconductor device modeling; Semiconductor process modeling; Power MOSFETs; Single Event Burnout; TCAD simulations; prediction model;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937442
