Initial proton damage comparison of an e2v technologies N-channel and P-channel CCD204

Author

Gow, J.P.D. ; Murray, Neil J. ; Holland, Andrew D. ; Burt, David

Author_Institution

e2v Centre for Electron. Imaging, Planetary & Space Sci., Open Univ., Milton Keynes, UK

fYear

2013

fDate

23-27 Sept. 2013

Firstpage

1

Lastpage

5

Abstract

Comparisons have been made of the relative degradation of charge transfer efficiency in n-channel and p-channel CCDs subjected to proton irradiation. The comparison described in this paper was made using e2v technologies plc. CCD204 devices fabricated using the same mask set. The device performance was compared over a range of temperatures using the same experimental arrangement and technique to provide a like-for-like comparison. The parallel transfer using the p-channel CCD was then optimised using a trap pumping technique to identify the optimal operating conditions at 153 K.

Keywords

charge exchange; charge-coupled devices; proton effects; semiconductor device manufacture; charge transfer efficiency; e2v technologies N-channel CCD204; e2v technologies P-channel CCD204; proton damage; proton irradiation; temperature 153 K; trap pumping technique; Charge coupled devices; Charge transfer; Clocks; Performance evaluation; Protons; Radiation effects; Temperature measurement; CCD; charge transfer inefficiency; p-channel; pocket/trap pumping; proton radiation damage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on

Conference_Location

Oxford

Type

conf

DOI

10.1109/RADECS.2013.6937450

Filename

6937450