Title :
Proton, electron and heavy ion single event effects on the HAS2 CMOS Image Sensor
Author :
Beaumel, M. ; Herve, D. ; Van Aken, Dirk ; Pourrouquet, P. ; Poizat, Marc
Author_Institution :
EADS SODERN, Limeil-Brévannes, France
Abstract :
The Single Event Effects sensitivity of the HAS2 CMOS Image Sensor has been characterized with protons, electrons and heavy ions. Effects in the photosensitive area and in the readout integrated circuit have been studied.
Keywords :
CMOS image sensors; proton effects; radiation hardening (electronics); HAS2 CMOS image sensor; electron effects; heavy ion single event effects; photosensitive area; proton effects; readout integrated circuit; Arrays; Protons; Radiation effects; Shift registers; Single event upsets; CMOS Image Sensors; Radiation;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937451
