Title :
Impact of plasma-charging damage polarity on MOSFET noise
Author :
Cheung, K.P. ; Martin, S. ; Misra, D. ; Steiner, K. ; Colonell, J.I. ; Chang, C.P. ; Lai, W.Y.C. ; Liu, C.T. ; Liu, R. ; Pai, C.S.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Plasma-charging damage is known to be a high-field injection phenomenon during plasma processing. It is also known that it can happen in either the gate-injection mode or substrate-injection mode, depending on the plasma potential distribution. However, the effect of this polarity difference on damage is seldom addressed. A number of groups have studied the impact of plasma-charging damage on low frequency MOSFET noise. The consensus is that plasma charging damage increases the low frequency noise of a MOSFET. However, in this work, we observed a strong dependence of the MOSFET low frequency noise on the polarity of plasma-charging damage. When the plasma-charging damage is of the gate-injection type, the MOSFET low frequency noise is insensitive to damage whereas when the polarity is of the substrate-injection type, the MOSFET low frequency noise is very sensitive to damage.
Keywords :
MOSFET; electron traps; high field effects; plasma applications; semiconductor device noise; surface charging; LF noise; MOSFET noise; electron trap density; gate-injection mode; high-field injection phenomenon; low frequency noise; plasma potential distribution; plasma processing; plasma-charging damage polarity; substrate-injection mode; Antenna measurements; Current measurement; Electron traps; Low-frequency noise; MOSFET circuits; Noise measurement; Plasma devices; Plasma materials processing; Plasma measurements; Stress measurement;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650418
