DocumentCode
1993903
Title
ESD issues in compound semiconductor high frequency devices and circuits
Author
Bock, K.
Author_Institution
IMEC, Kapeldreef 75, B-3001 Leuven ,Belgium
fYear
1997
fDate
25-25 Sept. 1997
Firstpage
1
Lastpage
12
Abstract
The need of (electrostatic discharge) ESD protection for high frequency devices and circuits is underlined by reviewing the compound semiconductor material properties with emphasis to ESD stress and by collecting their ESD failure thresholds. Basic requirements for possible ESD protection structures in the microwave frequency regime are discussed and possible ESD protection devices and circuit concepts are proposed.
Keywords
Circuits; Electrostatic discharge; Frequency; MMICs; Material properties; Protection; Semiconductor materials; Silicon; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium,1997. Proceedings
Conference_Location
Orlando, FL, USA
Print_ISBN
1-878303-69-4
Type
conf
DOI
10.1109/EOSESD.1997.634220
Filename
634220
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