• DocumentCode
    1994273
  • Title

    GaAs MBE Monolithic Low-Noise Amplifiers at X-Band

  • Author

    van der Merwe, D.G. ; Hung, H.-L.A. ; Camnitz, L. ; Eastman, L.F.

  • Author_Institution
    Cornell University, School of Electrical Engineering, 420 Phillips Hall, Ithaca, NY 14853.
  • fYear
    1985
  • fDate
    9-13 Sept. 1985
  • Firstpage
    919
  • Lastpage
    924
  • Abstract
    Dual-and single-stage low-noise GaAs MESFET monolithic amplifiers based on layers grown using molecular beam epitaxy (MBE) have been successfully developed for use at X-band. The single-stage amplifier exhibits a noise figure of 2.5 dB and an associated gain of 8.0 dB at 12.0 GHz, with power gain increasing to 9.5 dB at a higher bias level. The dual-stage amplifier exhibits a noise figure of 2.7 dB at 10.0 GHz with an associated gain of 18 dB. Both amplifiers have 4-GHz bandwidths; gain flatness is ±0.5 dB for the single-stage amplifier and ±1 dB for the dual-stage amplifier.
  • Keywords
    Buffer layers; Circuit noise; Distributed parameter circuits; FETs; Fabrication; Gallium arsenide; Low-noise amplifiers; Molecular beam epitaxial growth; Noise figure; Performance gain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1985. 15th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1985.333595
  • Filename
    4132283
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1994273