DocumentCode
1994344
Title
Influence Of The Device Geometry And Inhomogeneity On The Electrostatic Discharge Sensitivity Of InGaAs/InP Avalanche Photodetectors
Author
Neitzert, Heinz-Christoph ; Cappa, Valeria ; Crovato, Rosella
Author_Institution
Centro Studi e Laboratory Telecomunicazioni, Italy
fYear
1997
fDate
25-25 Sept. 1997
Firstpage
18
Lastpage
26
Abstract
An electrostatic discharge sensitivity study of four different types of InGaAsAnP avalanche photodiodes revealed that destruction occurred generally during negative pulse application at pulse amplitudes between 700V and 1400V. Photoluminescence and differential phase contrast imaging has been used for failure localization. A correlation between the location of the device breakdown and the active area inhomogeneity has been found for one type of avalanche photodiode.
Keywords
Avalanche photodiodes; Electric breakdown; Electrodes; Electrostatic discharge; Geometry; Indium gallium arsenide; Indium phosphide; Nonuniform electric fields; Photodetectors; Photoluminescence;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium,1997. Proceedings
Conference_Location
Orlando, FL, USA
Print_ISBN
1-878303-69-4
Type
conf
DOI
10.1109/EOSESD.1997.634222
Filename
634222
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