DocumentCode :
1994381
Title :
A new approach for electrothermal analysis of electronic circuits
Author :
Mohammadi, F.A. ; Farkhani, F. Farrokhi ; Hossain, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ryerson Univ., Toronto, ON, Canada
fYear :
2011
fDate :
15-18 May 2011
Firstpage :
1844
Lastpage :
1847
Abstract :
In this paper a new methodology and implementation of an experimental infrared (IR) measurement technique for the thermal and electrothermal analysis of electronic circuits is presented. The electrothermal analysis is based on coupling a circuit simulator and IR thermography measurement through an application program interface that updates the temperature information in near-real time. This method is applied to study the performance of a power MOSFET circuit.
Keywords :
circuit simulation; infrared imaging; power MOSFET; semiconductor device measurement; IR thermography measurement; application program interface; circuit simulator; electronic circuits; electrothermal analysis; experimental infrared measurement; power MOSFET circuit; Cameras; Heating; Integrated circuit modeling; Power MOSFET; Temperature; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
ISSN :
0271-4302
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
Type :
conf
DOI :
10.1109/ISCAS.2011.5937945
Filename :
5937945
Link To Document :
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