• DocumentCode
    1994588
  • Title

    Toleranced Equvivalent Circuit Elements as a Function of Gate and Drain Volatages for MMIC Gass FETS and TEGFETS

  • Author

    Montoriol, G. ; Le Bruan, M. ; Parisot, M. ; Pavlidis, D. ; Rumelhard, C. ; Sentubery, C.

  • Author_Institution
    THOMSON CSF - DHM/DAG - Dominate de Corbeville - BP 10 - 91401 - ORSAY - FRANCE
  • fYear
    1985
  • fDate
    9-13 Sept. 1985
  • Firstpage
    1025
  • Lastpage
    1030
  • Abstract
    MESFET and TEGFET equivalent circuit models are given as a function of drain and gate bias voltages. The models are prepared to include the dispersions on the characteristics of one wafer or from wafer to wafer. Two GaAs MESFETs having 1um and 0.5 ¿m gate llngths and an 0.5¿m TEGFET are treated. An examp1e is given for a full amplifier study.
  • Keywords
    Electrical resistance measurement; Equivalent circuits; FETs; Gallium arsenide; HEMTs; MESFET circuits; MMICs; MODFETs; Scattering parameters; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1985. 15th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1985.333612
  • Filename
    4132300
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1994588