DocumentCode
1994612
Title
Modulation coding for flash memories
Author
Yongjune Kim ; Kumar, B. V. K. Vijaya ; Kyoung Lae Cho ; Hongrak Son ; Jaehong Kim ; Jun Jin Kong ; Jaejin Lee
Author_Institution
Data Storage Syst. Center, Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear
2013
fDate
28-31 Jan. 2013
Firstpage
961
Lastpage
967
Abstract
The aggressive scaling down of flash memories has threatened data reliability since the scaling down of cell sizes gives rise to more serious degradation mechanisms such as cell-to-cell interference and lateral charge spreading. The effect of these mechanisms has pattern dependency and some data patterns are more vulnerable than other ones. In this paper, we will categorize data patterns taking into account degradation mechanisms and pattern dependency. In addition, we propose several modulation coding schemes to improve the data reliability by transforming original vulnerable data patterns into more robust ones.
Keywords
flash memories; interference (signal); modulation coding; reliability; aggressive flash memories scaling down; cell sizes; data pattern categorization; data reliability; degradation mechanisms; modulation coding; pattern dependency; vulnerable data pattern transform; Computer architecture; Encoding; Flash memories; Interference; Microprocessors; Modulation coding; Threshold voltage; Cell-to-cell interference; flash memory; lateral charge spreading; modulation coding; runlength limited (RLL) code;
fLanguage
English
Publisher
ieee
Conference_Titel
Computing, Networking and Communications (ICNC), 2013 International Conference on
Conference_Location
San Diego, CA
Print_ISBN
978-1-4673-5287-1
Electronic_ISBN
978-1-4673-5286-4
Type
conf
DOI
10.1109/ICCNC.2013.6504220
Filename
6504220
Link To Document