• DocumentCode
    1994612
  • Title

    Modulation coding for flash memories

  • Author

    Yongjune Kim ; Kumar, B. V. K. Vijaya ; Kyoung Lae Cho ; Hongrak Son ; Jaehong Kim ; Jun Jin Kong ; Jaejin Lee

  • Author_Institution
    Data Storage Syst. Center, Carnegie Mellon Univ., Pittsburgh, PA, USA
  • fYear
    2013
  • fDate
    28-31 Jan. 2013
  • Firstpage
    961
  • Lastpage
    967
  • Abstract
    The aggressive scaling down of flash memories has threatened data reliability since the scaling down of cell sizes gives rise to more serious degradation mechanisms such as cell-to-cell interference and lateral charge spreading. The effect of these mechanisms has pattern dependency and some data patterns are more vulnerable than other ones. In this paper, we will categorize data patterns taking into account degradation mechanisms and pattern dependency. In addition, we propose several modulation coding schemes to improve the data reliability by transforming original vulnerable data patterns into more robust ones.
  • Keywords
    flash memories; interference (signal); modulation coding; reliability; aggressive flash memories scaling down; cell sizes; data pattern categorization; data reliability; degradation mechanisms; modulation coding; pattern dependency; vulnerable data pattern transform; Computer architecture; Encoding; Flash memories; Interference; Microprocessors; Modulation coding; Threshold voltage; Cell-to-cell interference; flash memory; lateral charge spreading; modulation coding; runlength limited (RLL) code;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computing, Networking and Communications (ICNC), 2013 International Conference on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    978-1-4673-5287-1
  • Electronic_ISBN
    978-1-4673-5286-4
  • Type

    conf

  • DOI
    10.1109/ICCNC.2013.6504220
  • Filename
    6504220