Title :
Ultra thin (<3 nm) high quality nitride/oxide stack gate dielectrics fabricated by in-situ rapid thermal processing
Author :
Kim, B.Y. ; Luan, H.F. ; Kwong, D.L.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
In this paper, ultra thin (<3 nm) Si/sub 3/N/sub 4//SiO/sub 2/ stack layer with significant lower leakage current, superior boron diffusion barrier properties, and reliability compared with SiO/sub 2/ of identical thickness have been fabricated by in-situ RTP processing. These results demonstrate for the first time that ultra thin LPCVD Si/sub 3/N/sub 4/ can be used as gate dielectrics, contrary to those conclusions made previously on thicker LPCVD Si/sub 3/N/sub 4/.
Keywords :
CVD coatings; dielectric thin films; diffusion barriers; leakage currents; rapid thermal processing; silicon compounds; LPCVD; Si/sub 3/N/sub 4/-SiO/sub 2/; Si:B; boron diffusion barrier; in-situ rapid thermal processing; leakage current; reliability; ultra thin nitride/oxide stack gate dielectric; Annealing; Boron; Capacitance-voltage characteristics; Dielectrics; Hot carriers; Hysteresis; Interface states; Leakage current; MOS devices; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650424
