Title :
Inverted-Gate GaAs Mesfet Characteristics
Author :
El-Ghazaly, Samnir ; Itoh, Tatsuo
Author_Institution :
Dept. of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, USA.
Abstract :
A non-coplanar MESFET, in which the gate is located at the bottom of the active layer, is studied. Its characteristics are simulated using an accurate two dimensional computer model which takes into account the non-stationary conditons associated with submicron-gate GaAs MESFET´s. The potentially interesting characteristics of this device are compared with those of a coplanar structure having the same parameters.
Keywords :
Buffer layers; Computational modeling; Computer simulation; Doping; Electrodes; Gallium arsenide; Grounding; Low-noise amplifiers; MESFETs; Poisson equations;
Conference_Titel :
Microwave Conference, 1987. 17th European
Conference_Location :
Rome, Italy
DOI :
10.1109/EUMA.1987.333703
