DocumentCode
1995193
Title
Inverted-Gate GaAs Mesfet Characteristics
Author
El-Ghazaly, Samnir ; Itoh, Tatsuo
Author_Institution
Dept. of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, USA.
fYear
1987
fDate
7-11 Sept. 1987
Firstpage
113
Lastpage
118
Abstract
A non-coplanar MESFET, in which the gate is located at the bottom of the active layer, is studied. Its characteristics are simulated using an accurate two dimensional computer model which takes into account the non-stationary conditons associated with submicron-gate GaAs MESFET´s. The potentially interesting characteristics of this device are compared with those of a coplanar structure having the same parameters.
Keywords
Buffer layers; Computational modeling; Computer simulation; Doping; Electrodes; Gallium arsenide; Grounding; Low-noise amplifiers; MESFETs; Poisson equations;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1987. 17th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1987.333703
Filename
4132330
Link To Document