DocumentCode
1995291
Title
Very High Performance GaAs Microwave Mesfet Power Devices
Author
Donzelli, G.P. ; Angione, C. ; Cipelletti, M. ; Mengoni, P. ; Bastida, E.M.
Author_Institution
TELETTRA S.P.A. Vimercate, Milan (ITALY)
fYear
1987
fDate
7-11 Sept. 1987
Firstpage
142
Lastpage
147
Abstract
A new power FET topology is described which permits exceptional microwave performance and manufacturing characteristics. As an example of pratical device use, the performances of a class A-B 11 GHz, 1 W hybrid amplifier with 40% power added efficiency is reported.
Keywords
Circuit topology; Cutoff frequency; FETs; Fingers; Gallium arsenide; Geometry; MESFETs; Metallization; Microwave devices; VHF circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1987. 17th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1987.333717
Filename
4132335
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