• DocumentCode
    1995304
  • Title

    General EOS/ESD equation

  • Author

    Smith, Jack S.

  • Author_Institution
    Lockheed Martin Advanced Technology Center
  • fYear
    1997
  • fDate
    25-25 Sept. 1997
  • Firstpage
    59
  • Lastpage
    67
  • Abstract
    It is proposed the general EOS/ESD equation is nothing more than the heat equation driven by electrical power. Further that virtually all EOS/ESD failures are rooted in the thermal process. Support is given for the three materials; metals, semiconductors and particularly insulators. We compare the failure of an earthen dam to that of dielectric breakdown and show the remarkable similarity in behavior. A consequence of the General equation is that latency is not a legitimate consideration.
  • Keywords
    Conducting materials; Current density; Electrostatic discharge; Equations; Lifting equipment; Resistance heating; Semiconductor materials; Solids; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium,1997. Proceedings
  • Conference_Location
    Orlando, FL, USA
  • Print_ISBN
    1-878303-69-4
  • Type

    conf

  • DOI
    10.1109/EOSESD.1997.634226
  • Filename
    634226
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1995304