Title :
CMOS-compatible AlN piezoelectric micromachined ultrasonic transducers
Author :
Shelton, Stefon ; Chan, Mei-Lin ; Park, Hyunkyu ; Horsley, David ; Boser, Bernhard ; Izyumin, Igor ; Przybyla, Richard ; Frey, Tim ; Judy, Michael ; Nunan, Kieran ; Sammoura, Firas ; Yang, Ken
Author_Institution :
Berkeley Sensor & Actuator Center, Univ. of California, Davis, CA, USA
Abstract :
Piezoelectric micromachined ultrasonic transducers for air-coupled ultrasound applications were fabricated using aluminum nitride (AlN) as the active piezoelectric layer. The AlN is deposited via a low-temperature sputtering process that is compatible with deposition on metalized CMOS wafers. An analytical model describing the electromechanical response is presented and compared with experimental measurements. The membrane deflection was measured to be 210 nm when excited at the 220 kHz resonant frequency using a 1Vpp input voltage.
Keywords :
CMOS integrated circuits; aluminium compounds; micromachining; piezoelectric transducers; sputter deposition; ultrasonic transducers; AlN; CMOS-compatible A1N piezoelectric micromachined ultrasonic transducers; active piezoelectric layer; air-coupled ultrasound applications; aluminum nitride; analytical model; electromechanical response; frequency 220 kHz; low-temperature sputtering; membrane deflection; metalized CMOS wafers; Aluminum nitride; Analytical models; Biomembranes; CMOS process; Frequency measurement; Resonant frequency; Sputtering; Ultrasonic imaging; Ultrasonic transducers; Ultrasonic variables measurement; acoustic devices; microelectromechanical devices; piezoelectric transducers;
Conference_Titel :
Ultrasonics Symposium (IUS), 2009 IEEE International
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4389-5
Electronic_ISBN :
1948-5719
DOI :
10.1109/ULTSYM.2009.5441602
