CMOS-compatible AlN piezoelectric micromachined ultrasonic transducers

Author

Shelton, Stefon ; Chan, Mei-Lin ; Park, Hyunkyu ; Horsley, David ; Boser, Bernhard ; Izyumin, Igor ; Przybyla, Richard ; Frey, Tim ; Judy, Michael ; Nunan, Kieran ; Sammoura, Firas ; Yang, Ken

Author_Institution

Berkeley Sensor & Actuator Center, Univ. of California, Davis, CA, USA

fYear

2009

fDate

20-23 Sept. 2009

Firstpage

402

Lastpage

405

Abstract

Piezoelectric micromachined ultrasonic transducers for air-coupled ultrasound applications were fabricated using aluminum nitride (AlN) as the active piezoelectric layer. The AlN is deposited via a low-temperature sputtering process that is compatible with deposition on metalized CMOS wafers. An analytical model describing the electromechanical response is presented and compared with experimental measurements. The membrane deflection was measured to be 210 nm when excited at the 220 kHz resonant frequency using a 1V_pp input voltage.

Keywords

CMOS integrated circuits; aluminium compounds; micromachining; piezoelectric transducers; sputter deposition; ultrasonic transducers; AlN; CMOS-compatible A1N piezoelectric micromachined ultrasonic transducers; active piezoelectric layer; air-coupled ultrasound applications; aluminum nitride; analytical model; electromechanical response; frequency 220 kHz; low-temperature sputtering; membrane deflection; metalized CMOS wafers; Aluminum nitride; Analytical models; Biomembranes; CMOS process; Frequency measurement; Resonant frequency; Sputtering; Ultrasonic imaging; Ultrasonic transducers; Ultrasonic variables measurement; acoustic devices; microelectromechanical devices; piezoelectric transducers;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2009 IEEE International

Conference_Location

Rome

ISSN

1948-5719

Print_ISBN

978-1-4244-4389-5

Electronic_ISBN

1948-5719

Type

conf

DOI

10.1109/ULTSYM.2009.5441602

Filename

5441602