A Broadband MMIC Dual-Gate FET Switch Module with On-Chip TTL Control Interface

The design approach, modeling techniques, and measured performance of a monolithic GaAs dual-gate FET switch module with an on-chip TTL-compatible switch control circuit are presented. This self-bias switch circuit, with chip dimensions of 1.5 × 2.5 mm (60 × 100 mils), has a gain of 11.2 dB and ON-to-OFF isolation better than 50 dB over 3.5 to 6.5 GHz. The design is based on dual-gate FET parameters derived from a known ion implantation profile, peak doping density, and device physical parameters. The measured gain in the ON-state is within 1 dB of the modeled performance over the 3.5- to 7.5-GHz band.