1 to 20 GHZ Monolithic Distributed Amplifier using GaAs MESFET´S or HEMT´S

1 to 20 GHz monolithic FET amplifiers have been designed and fabricated. The design approach is based on a detailed analysis of the impedances and the cut-off frequency of the transmission lines to reduce the ripple and to increase the bandwidth up to the maximum capabilities of the FET´s. The packaged MMIC results snow an overall gain of 11±1 dB for 2 stages from 1 to 19.5 GHz with an overall noise figure of 7.5 dB. Better performances can be achieved with 0,5 ¿m HEMT´s : 8 dB gain from 1 to 20 GHz with a much lower noise figure (¿ 5 dB)