Title :
Shallow source/drain extensions for pMOSFETs with high activation and low process damage fabricated by plasma doping
Author :
Takase, M. ; Yamashita, K. ; Hori, A. ; Mizuno, B.
Author_Institution :
Central Res. Labs., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
Low sheet resistance and extremely shallow profiles are achieved by plasma doping with low process damage and high activation efficiency. High performance pMOSFETs have also been fabricated by taking advantage of well-controlled plasma doped extensions. Linear transconductance (Gm) of the pMOSFET with plasma doped extensions is about 30% larger than that of 10 keV ion implanted device with same source/drain junction depth.
Keywords :
CMOS integrated circuits; MOSFET; doping profiles; integrated circuit yield; large scale integration; semiconductor doping; CMOS; LSI; activation efficiency; linear transconductance; pMOSFETs; plasma doping; process damage; shallow source/drain extensions; sheet resistance; source/drain junction depth; Boron; CMOS technology; Doping profiles; Ion implantation; MOSFETs; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Plasma sources; Plasma temperature;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650427
