DocumentCode
1995583
Title
GaAs MMIC Power FET Amplifiers at K-Band
Author
Hung, H-L.A. ; Ezzeddine, A. ; Phelleps, F.R. ; Bass, J.F. ; Huang, H.C.
Author_Institution
COMSAT Laboratories, Clarksburg, Maryland, U.S.A.
fYear
1987
fDate
7-11 Sept. 1987
Firstpage
255
Lastpage
260
Abstract
K-band monolithic power GaAs FET amplifier modules have been developed. These single-ended modules provide a linear gain of 4.5 dB and out-put power of 27 dBm in the 17.7- to 20.5-GHz band. At 19 GHz, a balanced module has achieved an output power of up to 1.5 W (0.52 W/mm), while a cascaded multistage amplifier has demonstrated a linear power gain of 26.2 dB and output power of 1.33 W. These 1.7- × 1.8-mm MMICs include DC-blocking capacitors and bias networks.
Keywords
Capacitors; FETs; Fingers; Gain; Gallium arsenide; K-band; MMICs; Microwave integrated circuits; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1987. 17th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1987.333634
Filename
4132352
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