"Design and Technology" Optimisation for High Yield Monolithic GaAs X Band Low Noise Amplifiers

The purpose of this study is to demonstrate how an improved GaAs design technique associated with an optimised technology, can fulfill the low-cost, high yield objectives required for the industrial exploitation of MMIC´s. Two reproductible 3s stage amplifiers realized in two different frequency bands provide respectively a noise figure of 2.8 dB with an associated gain of 21 dB at 12 GHz and 3 dB noise figure with 24 dB gain at 9 GHz. The overall chip sizes are less than 2 mm2.