Title :
Efficiency Comparison of AC-Link and TIPS (SST) Topologies based on accurate device models
Author :
De, Ankan ; Roy, Sudhin ; Bhattacharya, Subhashish
Author_Institution :
Future Renewable Electr. Energy Delivery & Manage. (FREEDM) Syst. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
In this paper, a comparative study on AC-Link™ Topology and a conventional solid state transformer (TIPS) has been shown. Alongside, as a building block, a comparative device level design study has been shown for 6.5kV Si-IGBT/SiC JBS diode, 6.5kV Si-IGBT/Si-PiN Diode and 10kV SiC-MOSFET/SiC-JBS Diode for a zero voltage/current transition and hard switched condition for medium voltage application. It is shown that soft switching yields a considerable reduction of losses for all devices. A low voltage hardware device test prototype has been built and tested. The main motive of the paper is to make a fair judgment on the two topologies with accurate device testing. This is further extended to the maximum attainable frequency analysis, corresponding efficiency comparison, frequency transfer capability and various other topology based comparisons.
Keywords :
elemental semiconductors; insulated gate bipolar transistors; p-i-n diodes; power MOSFET; power semiconductor diodes; power transformers; semiconductor device models; semiconductor device testing; silicon; silicon compounds; wide band gap semiconductors; AC-link topology; IGBT; JBS diode; MOSFET; PiN diode; SST topology; Si; SiC; TIPS topology; device level design study; device testing; frequency transfer capability; hard switched condition; losses reduction; low voltage hardware device test prototype; maximum attainable frequency analysis; soft switching yields; solid state transformer; voltage 10 kV; voltage 6.5 kV; zero voltage-current transition; Inductors; Insulated gate bipolar transistors; Integrated circuit modeling; Semiconductor diodes; Silicon carbide; Switches; Topology;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4673-0802-1
Electronic_ISBN :
978-1-4673-0801-4
DOI :
10.1109/ECCE.2012.6342282
