Improved embedded EEPROM in 0.35μMCMOS technology with small-scale

Author

Cheng, Zhaoxian ; Zhang, Xiaoxing ; Dai, Yujie ; Lu, Yingjie

Author_Institution

Inst. of Microelectron., Nankai Univ., Tianjin, China

fYear

2011

fDate

16-18 Sept. 2011

Firstpage

1589

Lastpage

1591

Abstract

This paper presents a low-power embedded EEPROM in a short-range passive RFID tag. This tag was designed according to ISO/IEC 15693 protocol. An improved structure of array circuit is proposed which can reduce leakage of memory bit cell efficiently. The proposed circuits can reduce maximum to 8 uA per bit cell. A new RFID EEPROM timing design and its optimized control circuit are developed. The fabrication technology is the 0.35-μm four-metal two-poly mixed signal CMOS process with embedded EEPROM. The low power consumption to erase /write is 38 μA, and reading power consumption is 2.2 μA at 2.6 V.

Keywords

CMOS memory circuits; EPROM; IEC standards; ISO standards; protocols; radiofrequency identification; ISO-IEC 15693 protocol; RFID EEPROM timing design; array circuit; current 2.2 muA; current 38 muA; current 8 muA; fabrication technology; four-metal two-poly mixed signal CMOS process; improved embedded EEPROM; memory bit cell; optimized control circuit; short-range passive RFID tag; size 0.35 mum; voltage 2.6 V; Arrays; EPROM; Logic gates; Passive RFID tags; Power demand; Timing; array circuit; embedded EEPROM; low power; small-scale;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Control Engineering (ICECE), 2011 International Conference on

Conference_Location

Yichang

Print_ISBN

978-1-4244-8162-0

Type

conf

DOI

10.1109/ICECENG.2011.6058109

Filename

6058109