Title :
The CMS development on Si detectors
Author_Institution :
Dipt. Interateneo di Fisica, Ist. Nazionale di Fisica Nucl., Bari, Italy
Abstract :
Silicon microstrip detectors at LHC have to be operated in a very hostile environment. Few years ago CMS started a systematic study of the device characteristics as a function of the most important parameters. Investigations have been carried on different bulk resistivities, crystal orientation, high voltage stability as a function of the implant and metal strip geometry and of multiguard structures. Finally, charge collection efficiency and S/N ratio for different types of sensors have been studied in beam tests
Keywords :
position sensitive particle detectors; silicon radiation detectors; CMS development; LHC; Si; Si microstrip detectors; bulk resistivities; charge collection efficiency; crystal orientation; high voltage stability; multiguard structures; Collision mitigation; Conductivity; Detectors; Implants; Large Hadron Collider; Microstrip; Silicon; Stability; Strips; Voltage;
Conference_Titel :
Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-5696-9
DOI :
10.1109/NSSMIC.1999.842442
