DocumentCode
1995910
Title
TuneFPGA: Post-silicon tuning of dual-Vdd FPGAs
Author
Bijansky, Stephen ; Aziz, Adnan
Author_Institution
Univ. of Texas at Austin, Austin, TX
fYear
2008
fDate
8-13 June 2008
Firstpage
796
Lastpage
799
Abstract
Modern CMOS manufacturing processes have significant variability, which necessitates guard banding to achieve reasonable yield. We study an FPGA architecture with a dual voltage supply wherein the supply voltage for individual CLBs can be assigned after fabrication; this yields a mechanism for fixing chips that fail because of manufactured transistors being slower than designed. The fundamental advance our work makes is that we assign voltages based on manufactured data rather than designed values. The key contributions of our work are a CAD methodology and a detailed quantitative study using realistic data on the latest process technologies of the impact of post-manufacturing tuning on yield and power for dual-Vdd FPGAs. We find that, for a representative modern process, post-manufacturing tuning can increase the yield by up to 10 x compared with a conventional dual-Vdd design that selects the voltage supply pre-manufacturing, even with guard banding. Overall, the geometric mean of yield/power ratio is 27% greater using post- manufacturing tuning.
Keywords
CMOS integrated circuits; circuit tuning; field programmable gate arrays; integrated circuit yield; logic CAD; silicon; CAD methodology; CMOS manufacturing process; Si; TuneFPGA; dual voltage supply; dual-Vdd FPGA; integrated circuit yield; post-silicon tuning; realistic data; CMOS process; Fabrication; Field programmable gate arrays; Leakage current; Manufacturing processes; Multiplexing; Permission; Table lookup; Threshold voltage; Transistors; Delay; FPGA; Process Variation; Tuning; Yield;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference, 2008. DAC 2008. 45th ACM/IEEE
Conference_Location
Anaheim, CA
ISSN
0738-100X
Print_ISBN
978-1-60558-115-6
Type
conf
Filename
4555928
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