Title :
Analysis of resistive load ring oscillator
Author :
Mandal, Saurav ; Mal, Ashis Kumar
Author_Institution :
DIATM, Durgapur, India
Abstract :
In this paper, a new equation for frequency of a ring oscillator are proposed. This method is general enough to be used in all types of ring oscillator delay stages. In this proposed technique we are able to calculate the ring oscillator frequency in absence of process parameters such as threshold voltage, GAMMA, THETA etc. In the underlying work, a comparison has been shown between the analytical result and simulation result of ring oscillator using 50nm technology. The advantage of this method over other defined techniques is that its so simple and accurate to calculate the frequency with the help of pick amplitude voltage of ring oscillator. Result has been obtained using LTspice IV and BSIM 4.0 level 54 based MOSFET model using 50nm CMOS technology.
Keywords :
CMOS logic circuits; oscillators; BSIM 4.0 level 54; CMOS technology; LTspice IV; MOSFET model; resistive load ring oscillator; ring oscillator delay stage; ring oscillator frequency; size 50 nm; CMOS integrated circuits; Delays; Inverters; MOSFET; Mathematical model; Ring oscillators; Threshold voltage; N-type metal-oxide-semiconductor (NMOS); Pick amplitude Voltage (VP); Power Dissipation; Resistive load inverter; Ring Oscillator; Threshold Voltage (VT);
Conference_Titel :
Recent Trends in Information Systems (ReTIS), 2015 IEEE 2nd International Conference on
Conference_Location :
Kolkata
DOI :
10.1109/ReTIS.2015.7232925
