Title :
Modeling of ultra-low energy boron implantation in silicon
Author :
Hobler, G. ; Vuong, H.-H. ; Bevk, J. ; Agarwal, A. ; Gossmann, H.-J. ; Jacobson, D.C. ; Foad, M. ; Murrell, A. ; Erokhin, Y.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Monte Carlo simulations of 0.25-2 keV B implantations are shown to agree well with molecular dynamics simulations and SIMS data. The tails of point responses and dopant distributions at mask edges are found to be dominated by <110> channeling and to have only a slight dependence on tilt angle. A 3-D analytical model is proposed which approximates the Monte Carlo distributions well.
Keywords :
Monte Carlo methods; boron; channelling; doping profiles; elemental semiconductors; ion implantation; silicon; 0.25 to 2 keV; 3D analytical model; Monte Carlo simulation; Si:B; channeling; dopant distribution; mask edge; point response; silicon; tilt angle; ultra-low energy boron implantation; Analytical models; Artificial intelligence; Boron; Implants; Ion implantation; Jacobian matrices; Monte Carlo methods; Probability distribution; Round robin; Silicon;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650430
