Experiments and modeling of boron segregation in As implanted Si during annealing

Author

Chang, R.D. ; Choi, P.S. ; Wristers, D. ; Kwong, D.L.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

497

Lastpage

500

Abstract

Boron segregation toward implanted arsenic profile in Si during annealing was investigated under various annealing conditions. It is found that both implantation damage and arsenic deactivation enhance the diffusion of the embedded boron layer toward the As implanted profile. The boron segregation is caused by the electric field resulting from the formation of p-n junction. The location of boron segregation peak depends on annealing temperature and As profiles. 2-D simulation shows device degradation due to boron segregation caused by As deactivation.

Keywords

annealing; arsenic; boron; diffusion; doping profiles; elemental semiconductors; ion implantation; p-n junctions; segregation; silicon; 2D simulation; As implanted Si; Si:As,B; annealing; arsenic deactivation; boron segregation; damage; device degradation; diffusion; dopant profile; electric field; embedded layer; p-n junction; Boron; Degradation; Doping profiles; Furnaces; Implants; Microelectronics; P-n junctions; Rapid thermal annealing; Simulated annealing; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650432

Filename

650432