DocumentCode
1996566
Title
CdZnTe material uniformity and coplanar-grid gamma-ray detector performance
Author
Amman, M. ; Luke, P.N. ; Lee, J.S.
Author_Institution
California Univ., Berkeley, CA, USA
Volume
1
fYear
1999
fDate
1999
Firstpage
182
Abstract
“Electron-only” detection techniques such as the coplanar-grid method are effective in overcoming some of the charge transport problems of CdZnTe and, consequently, have led to large-volume gamma-ray detectors with good energy resolution while operating at room temperature. A requirement for the success of these techniques is uniformity in electron generation and transport. Once large inhomogeneities in these properties caused by grain boundaries and other large-scale crystal defects are eliminated through simple material screening techniques, small variations remain and limit the gamma-ray energy resolution. In this paper we present the results from our characterization and analysis of these nonuniformities in commercially available CdZnTe, and we establish the relationship between the nonuniformities and the ultimate coplanar-grid gamma-ray detector performance through experimental measurements
Keywords
III-V semiconductors; crystal defects; gamma-ray detection; grain boundaries; semiconductor counters; CdZnTe; CdZnTe detector; coplanar-grid gamma-ray detector; crystal defects; electron transport; energy resolution; gamma-ray detection; grain boundaries; material uniformity; nonuniformities; Cathodes; Collimators; Crystalline materials; Electrons; Energy resolution; Gamma ray detection; Gamma ray detectors; Grain boundaries; Pulse generation; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
Conference_Location
Seattle, WA
ISSN
1082-3654
Print_ISBN
0-7803-5696-9
Type
conf
DOI
10.1109/NSSMIC.1999.842472
Filename
842472
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